• 专利标题:   Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.
  • 专利号:   US2023056280-A1
  • 发明人:   INGLE N K, MALLICK A B, SINGHA R S, WANG J
  • 专利权人:   APPLIED MATERIALS INC
  • 国际专利分类:   C01B032/184, C23C016/26, C23C016/455, H01L021/02, H01L021/285, H01L023/532
  • 专利详细信息:   US2023056280-A1 23 Feb 2023 H01L-021/285 202320 English
  • 申请详细信息:   US2023056280-A1 US974859 27 Oct 2022
  • 优先权号:   US142626, US974859

▎ 摘  要

NOVELTY - Processing semiconductor involves delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber, where a flow rate ratio of the hydrogen-containing precursor to the carbon-containing precursor is maintained greater than or about 2:1. A layer of graphene is formed on a substrate positioned within the processing region of the semiconductor processing chamber, where the substrate is maintained at a temperature below or about 600℃. USE - Method for processing semiconductor used to produce high quality devices and structures. ADVANTAGE - The method may produce layers of graphene at reduced temperatures with and without plasma enhancement. The method may afford reduced thickness layers for barrier coverage.