▎ 摘　　要

NOVELTY - Processing semiconductor involves delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber, where a flow rate ratio of the hydrogen-containing precursor to the carbon-containing precursor is maintained greater than or about 2:1. A layer of graphene is formed on a substrate positioned within the processing region of the semiconductor processing chamber, where the substrate is maintained at a temperature below or about 600℃. USE - Method for processing semiconductor used to produce high quality devices and structures. ADVANTAGE - The method may produce layers of graphene at reduced temperatures with and without plasma enhancement. The method may afford reduced thickness layers for barrier coverage.