• 专利标题:   Synthesizing graphene using copper vapor, comprises preparing substrate, placing copper foil on substrate, forming copper vapor from copper foil, and contacting graphene precursor gas on substrate for synthesizing graphene on substrate.
  • 专利号:   KR2015047048-A, KR1548424-B1
  • 发明人:   CHOI H C, KIM H K, SONG I T
  • 专利权人:   POSTECH ACADIND FOUND
  • 国际专利分类:   C01B031/02, C23C016/06
  • 专利详细信息:   KR2015047048-A 04 May 2015 C01B-031/02 201536 Pages: 11
  • 申请详细信息:   KR2015047048-A KR126791 23 Oct 2013
  • 优先权号:   KR126791

▎ 摘  要

NOVELTY - Synthesizing graphene using copper vapor, comprises (a) preparing a substrate, (b) placing copper foil on the substrate, (c) forming copper vapor from copper foil, and (d) contacting graphene precursor gas on the substrate for synthesizing graphene on the substrate. The graphene precursor gas promotes graphene synthesis reaction by the copper vapor. USE - The method is useful for synthesizing graphene using copper vapor (claimed). ADVANTAGE - The method minimizes contamination, and improves quality, and is simple and economical. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene synthesizing element obtained by the above method.