▎ 摘　　要

NOVELTY - Graphene is prepared by vacuumizing substrate in reaction chamber under catalytic action in inert gas while keeping oxygen-free atmosphere in chamber, adjusting hot filament wire temperature to 500-1300 degrees C, passing inert gas, maintaining oxygen-free atmosphere in reaction chamber for 1-60 minutes, increasing temperature to 1000-1500 degrees C, passing 10-200 sccm organic gas for 1-300 minutes, and adjusting inert gas speed to 10-50 sccm/minute. USE - Preparation of graphene for field effect transistor, electrode material, LCD material, or sensor (all claimed). ADVANTAGE - Specific surface area of graphene is greatly improved.