▎ 摘　　要

NOVELTY - The method involves forming a layer containing graphene on the first substrate (102). A semiconductor layer includes a light emitting layer is formed on the layer containing graphene. The semiconductor layer is processed to form a light emitting device having a bottom surface on the layer containing graphene and including a light emitting surface which is a surface opposite to the bottom surface. The first insulating film (156) covering the first substrate, the layer containing the graphene, and the light emitting element are formed. A via penetrating the first insulating film and the second insulating film are formed. A wiring layer (110) is formed on the second insulating film. The light emitting element includes a connection portion (151a) is formed on a layer containing the graphene, and the via is provided between the wiring layer and the connection portion are electrically connected to the wiring layer and the connection portion. USE - Method for manufacturing image display device (claimed).e.g OLED display. ADVANTAGE - The transfer process of a light emitting element is shortened and the yield is improved is realized. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an image display device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the image display device. First substrate (102) Wiring layer (110) Connection portion (151a) First insulating film (156) Filter layer (184)