• 专利标题:   Graphene-enhanced absorption metal micro-nano structure, comprises first metal layer, silicon dioxide layer, second metal layer and first graphene thin film layer are sequentially arranged on the base layer from bottom to top.
  • 专利号:   CN110927838-A
  • 发明人:   WANG H, LIU L, LIU K, CHI F, SHUI L, YI Z, ZHANG Z, QU Y
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   G02B005/00
  • 专利详细信息:   CN110927838-A 27 Mar 2020 G02B-005/00 202037 Pages: 13 Chinese
  • 申请详细信息:   CN110927838-A CN11096855 20 Sep 2018
  • 优先权号:   CN11096855

▎ 摘  要

NOVELTY - Graphene-enhanced absorption metal micro-nano structure, comprises first metal layer, a silicon dioxide layer, a second metal layer and a first graphene thin film layer are sequentially arranged on the base layer from bottom to top. The bottom layer is made of silicon or silicon dioxide material. The first metal layer and the second metal layer are made of gold or silver material, where the first graphene film layer is a graphene film of 1-3 layers. The thickness of the first metal layer and the second metal layer is 10-50nm, and the thickness of the silicon dioxide layer is 20-50nm. The first graphene film layer is further provided with a titanium dioxide film layer. The substrate is further provided with a second graphene film layer and first metal layer. The silicon dioxide layer is further provided with a transparent conductive film layer between the transparent conductive film layer and second metal layer is provided with a dielectric layer. USE - Used as graphene-enhanced absorption metal micro-nano structure. ADVANTAGE - The structure: is simple and convenient; enhances the absorption of incident light, solves the problem of small absorption rate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the graphene-enhanced absorption metal micro-nano structure. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of the graphene-enhanced absorption metal micro-nano structure.