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  • 专利标题:   Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.
  • 专利号:   WO2015102318-A1, KR2015078047-A, KR1572066-B1, EP3091106-A1, JP2016538236-W, US2017009371-A1, EP3091106-A4, US9834855-B2, EP3091106-B1
  • 发明人:   HWANG C, HWANG C Y
  • 专利权人:   KOREA RES INST STANDARDS SCI, KOREA RES INST STANDARDS SCI
  • 国际专利分类:   C30B025/16, C30B029/36, B01J021/02, C01B031/02, C30B029/02, C30B029/64, C01B031/04, C23C016/26, C30B001/08, C01B032/186, C01B032/196, C30B025/02, C01B032/194
  • 专利详细信息:   WO2015102318-A1 09 Jul 2015 C30B-025/16 201548 Pages: 16
  • 申请详细信息:   WO2015102318-A1 WOKR012902 26 Dec 2014
  • 优先权号:   KR167109, WOKR012902

▎ 摘　　要

NOVELTY - A polycrystalline graphene is formed (S100) on a substrate using a hydrocarbon gas, and a graphene film aligned on a wafer-scale insulator substrate is grown in one direction like a monocrystal. A catalyst is formed (S200) on the polycrystalline graphene, and polycrystalline graphene is recrystallized (S300) to monocrystalline graphene film by heat-treatment. USE - Manufacture of monocrystal graphene film for semiconductor device. ADVANTAGE - The monocrystal graphene film having high crystallinity is formed efficiently. DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart of manufacture of monocrystal graphene film. (Drawing includes non-English language text) Formation of polycrystalline graphene (S100) Formation of catalyst (S200) Recrystallization (S300)