▎ 摘　　要

NOVELTY - A double-mode common-electrode memristor comprises upper top electrode, upper resistive layer, common bottom electrode, lower resistive layer, and lower top electrode, and is divided into Mott memristor and storage memristor. The Mott memristor portion is composed of top electrode, upper resistive layer and common bottom electrode. The memory memristor portion is composed of lower top electrode, lower resistive layer, and common bottom electrode. The Mott memristor and storage memristor share bottom electrode. USE - Double-mode common-electrode memristor used for realizing high-speed digital-to-analog conversion and access of large-scale signals. ADVANTAGE - Compared with digital-to-analog conversion (AD) circuits, dual-mode common-electrode memristor can directly convert analog signals into digital signals and store them. The memristor is a three-dimensional vertical structure, which can be made into array and stacked structure, while the traditional digital-to-analog conversion is a planar structure, which is difficult to stack and occupies a large chip area. The memristor unit is small and can be used as a large-scale array for one-time processing of large-scale signals, which has area and volume. The memristor solves the problem of chip lead interconnection that cannot be overcome by traditional digital-to-analog conversion.