▎ 摘　　要

NOVELTY - An UV photoelectric detector based on small-diameter silicon nanowire array based on leakage mode resonance, uses a metal-assisted chemical wet etching method to form a small-diameter silicon nanowire array (5) on a lightly doped silicon wafer with (100) crystal orientation. The silicon nanowire array is paved with a graphene film (3). The silicon nanowire array and graphene film form Schottky barrier, so as to form UV photoelectric detector. USE - UV photoelectric detector based on small-diameter silicon nanowire array based on leakage mode resonance, used for converting optical signal into electric signal in optical communication, chemical analysis, optical imaging and biological sensing process. ADVANTAGE - The UV photoelectric detector has fast response speed, high response degree and simple preparation process compared with the device based on inorganic wide gap semiconductor. The nanowire array structure has strong absorption capability to UV light, and inhibits absorption of other wave band. The detector works under zero bias voltage, reduces power consumption of photodiode, and has low sensitivity to other wave bands. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the UV photoelectric detector, which involves: (a) ultrasonically cleaning lightly doped silicon wafer slices with (100) crystal orientation with alcohol, acetone and deionized water, and immersing in boiling piranha solution for 30-60 minutes; (b) mixing the stock solution of 100 nm polystyrene microspheres with concentration of 2.5% and alcohol in volume ratio of 1:0.5 to obtain a mixture of polystyrene microspheres, placing glass slide obliquely on culture dish filled with deionized water, slowly pouring polystyrene microsphere mixture into the culture dish through the glass slide, diffusing the polystyrene microspheres at interface between water and air, dripping 1-2 drops of sodium lauryl sulfate aqueous solution with concentration of 2% through rubber head dropper to gather the polystyrene microspheres to form a single-layer hexagonal close-packed polystyrene microsphere film; (c) using tweezers to clamp the silicon wafer slice, taking out the polystyrene microsphere film from the culture dish, placing at an angle until it is naturally dried, and placing in a drying box to fully dry; (d) putting the processed sample into a reactive ion etching machine, and passing oxygen to etch the polystyrene microspheres to reduce its diameter to 45-55 nm; (e) covering the surface of the sample with 20-30 nm-thick gold film by magnetron sputtering; (f) placing the sample into an etching solution composed of hydrofluoric acid and hydrogen peroxide in volume ratio of 4:1 for 10 minutes to form a small-diameter silicon nanowire array, taking out the sample, washing with deionized water and drying, removing remaining polystyrene microspheres by reactive ion etching machine, using aqua regia to remove gold film, and placing in hydrofluoric acid solution with concentration of 5% to soak for 10 minutes to remove oxide layer on surface of the silicon nanowire; and (g) adhering insulating tape (4) as an insulating layer on portion of the treated sample surface and transferring graphene film on the surface of the sample, making portion of graphene to cover insulating layer and remaining portion in direct contact with small-diameter silicon nanowire array without the insulating layer, setting silver paste on graphene in insulating layer area as contact electrode of the graphene, and setting indium gallium alloy electrode (2) on lower surface of silicon wafer slice to complete production of UV photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the UV photoelectric detector. Silver paste electrode (1) Indium gallium alloy electrode (2) Graphene film (3) Insulating tape (4) Small diameter-silicon nanowire array (5)