▎ 摘　　要

NOVELTY - Large-area graphene is prepared by cleaning silicon carbide, placing in reaction chamber graphene growth apparatus, heating at 1600 degrees C, carrying out hydrogen etching treatment, cooling at 850 degrees C, passing in silane with flow rate of 0.5 mL/minute, heating at 850?OC-1050 degrees C, opening gas valve, mixing argon and carbon tetrachloride, reacting, removing from reaction chamber, plating in physical vapor deposition coating machine using 200-300 nm thick copper film, heating at 900-1100 degrees C, annealing for 15-25 minutes, adding argon gas and placing in ferric chloride solution. USE - Method for preparing large-area graphene (claimed) used for biological, optical, electrical and sensor. ADVANTAGE - The method produces good continuity, uniformity and low porosity graphene. DETAILED DESCRIPTION - Large-area graphene is prepared by cleaning silicon carbide, placing in reaction chamber graphene growth apparatus with pressure of 13.3Pa, heating at 1600 degrees C, carrying out hydrogen etching treatment with flow rate of 90-120 L/minutes for 30 minutes, cooling at 850 degrees C, passing in silane with flow rate of 0.5 mL/minute for 10 minutes, heating at 850?OC-1050 degrees C, opening gas valve, mixing argon and carbon tetrachloride, reacting for 120-430 minutes, removing from reaction chamber, plating in physical vapor deposition coating machine using 200-300 nm thick copper film, heating at 900-1100 degrees C, annealing for 15-25 minutes, adding argon gas and placing in ferric chloride solution.