▎ 摘　　要

NOVELTY - Infrared radiation dynamic reconfigurable device, comprises a base layer and a doped vanadium dioxide layer from bottom to top. The doped vanadium dioxide layer is composed of at least one patterned doped vanadium dioxide units, the doping concentration of doping elements in the patterned doped vanadium dioxide unit is k, where k=0-5%, the thickness of the doped vanadium dioxide layer is 50-1000 nm when the doped vanadium dioxide layer is one layer, the thickness of the doped vanadium dioxide layer attached to the base layer is 200-1000 nm when the doped vanadium dioxide layer is more than one layer, and the thickness of the doped vanadium dioxide layer not attached to the base layer is 50-1000 nm. USE - Infrared radiation dynamic reconfigurable device. ADVANTAGE - The device adopts template method combined with the high energy pulse magnetic control sputtering technique to realize device preparation, low cost, strong stability, no need other dynamic reconfigurable device ultra-surface complex preparation process and complex super-surface structure primitive design simulation process, with simple and efficient, the time period is short, and the cost is low. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the preparation method of the infrared radiation dynamic reconfigurable device.