▎ 摘　　要

NOVELTY - The structure has a functional layer that is formed on the substrate (101). The electrodes are formed on both ends of the resistive functional layer, such that the electrode is formed of graphene. A contact electrode is formed on the outer side of the graphene electrode. The material of resistance changing function layer is formed of titanium oxide (TiO2), tantalum oxide (Ta2O5), aluminum oxide (Al2O3), hafnium oxide (HfO2) and zinc oxide (ZnO). USE - Planar structure of resistance RAM. ADVANTAGE - The planar structure is simple and effective in nature. The raw material costs are reduced and the resistance RAM size adjustment is realized. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of resistance RAM. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of planar structure of resistance RAM. Substrate (101) Silicon oxidation layer (102) Graphene nano belt (105) Contact electrode (106) Graphene electrode (107)