▎ 摘　　要

NOVELTY - Preparing large size and high quality graphene based on self-limiting nucleation growth comprises (i) polishing the copper foil, depositing and covering with nickel metal, (ii) adding the covered nickel metal copper foil into growth chamber in vacuum, inletting protective gas, maintaining certain pressure condition, and rapidly raising the temperature, and (iii) when the temperature reaches the growth temperature, introducing hydrogen and methane for graphene growth. USE - The method is useful for preparing large size and high quality graphene based on self-limiting nucleation growth (claimed). ADVANTAGE - The method: controls nucleation point of the graphene; in growing process, the copper is gradually spread to the nickel layer to form a nickel rich copper-nickel alloy, which can promote the nucleation point fast growth; realizes continuous increase of copper component in the surface layer, a large size single crystal single layer graphene form, while maintaining fast growth of the single crystal, which realizes continuous graphene film with large size and high quality.