▎ 摘　　要

NOVELTY - An ultra-fast micro-LED based on metal-insulator-semiconductor structure with enhanced local surface plasmon coupling comprises substrate, buffer layer, gallium nitride layer, p-type active layer, insulating layer, current spreading layer, and metal nanoparticle structure from bottom to top. The surface of the metal nanoparticle structure is provided with an opening extending to the surface of the p-type active layer, so that the surface of the p-type active layer forms an exposed area. A p-type ohmic contact electrode is provided on the surface of the exposed area, and an n-type ohmic contact electrode is provided on the surface of the metal nanoparticle structure. The p-type active layer is one or more of p-aluminum gallium nitride layer, a p-indium gallium nitride layer, p-aluminum gallium nitride/gallium nitride superlattice layer and indium-gallium nitride/gallium nitride superlattice layer. USE - Ultra-fast micro-LED based on metal-insulator-semiconductor structure with enhanced local surface plasmon coupling for optical communications, illumination, sterilization, medical treatment, biochemical detection and secret communication applications. ADVANTAGE - The ultra-fast micro-LED has improved carrier composite rate and composite efficiency, and reduced effective carrier lifetime, so that the modulation bandwidth of the device is increased. DETAILED DESCRIPTION - An ultra-fast micro-LED based on the metal-insulator-semiconductor structure with enhanced local surface plasmon coupling comprises a substrate, a buffer layer, a gallium nitride layer, a p-type active layer, an insulating layer, a current spreading layer, and a metal nanoparticle structure from bottom to top. The surface of the metal nanoparticle structure is provided with an opening extending to the surface of the p-type active layer, so that the surface of the p-type active layer forms an exposed area. A p-type ohmic contact electrode is provided on the surface of the exposed area, and an n-type ohmic contact electrode is provided on the surface of the metal nanoparticle structure. The p-type active layer is one or more of p-aluminum gallium nitride layer, p-indium gallium nitride layer, p-aluminum gallium nitride/gallium nitride (AlxGa1-xN/GaN) superlattice layer, p-aluminum gallium nitride/aluminum gallium nitride (p-AlxGa1-xN/AlyGa1-yN) superlattice layer, indium-gallium nitride/gallium nitride (p-InxGa1-xN/GaN) superlattice layer and indium-gallium nitride/indium gallium nitride (p-InxGa1-xN/InyGa1-yN) superlattice layer. An INDEPENDENT CLAIM is included for preparation of the ultra-fast micro-LED based on metal-insulator-semiconductor structure with enhanced local surface plasmon coupling.