• 专利标题:   Reduced graphene oxide-coated cobalt oxide microsphere composite material used as lithium-sulfur battery anode material, comprises cobalt oxide microspheres, and graphene oxide coated on surface of cobalt oxide microspheres.
  • 专利号:   CN112993257-A
  • 发明人:   WU J, XU X, JIANG M, ZHU M, SHENG W, XU J, SONG K
  • 专利权人:   UNIV HANGZHOU DIANZI
  • 国际专利分类:   H01M010/052, H01M004/62
  • 专利详细信息:   CN112993257-A 18 Jun 2021 H01M-004/62 202163 Pages: 8 Chinese
  • 申请详细信息:   CN112993257-A CN10264739 11 Mar 2021
  • 优先权号:   CN10264739

▎ 摘  要

NOVELTY - A reduced graphene oxide-coated cobalt(II,III) oxide microsphere composite material comprises cobalt(II,III) oxide microspheres, and graphene oxide coated on the surface of the cobalt(II,III) oxide microspheres. USE - Reduced graphene oxide-coated cobalt oxide microsphere composite material is used as lithium-sulfur battery anode material. ADVANTAGE - The reduced graphene oxide-coated cobalt oxide microsphere composite material can effectively relieve volume expansion of sulfur in lithium-sulfur battery charging and discharging process, and effectively improve conductivity of the anode material, and circulation stability of the lithium-sulfur battery. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the reduced graphene oxide-coated cobalt(II,III) oxide microsphere composite material, which involves dissolving cobalt acetate tetrahydrate as a cobalt source, cetyltrimethylammonium bromide as a surfactant and anhydrous sodium acetate as a dispersant in ethylene glycol, stirring until completely dissolved, transferring obtained solution to a reactor, reacting, centrifuging, drying, calcining obtained cobalt(II,III) oxide precursor powder in a muffle furnace, ultrasonically dispersing obtained porous cobalt(II,III) oxide microspheres and graphene oxide ethanol solution in absolute ethanol, adding obtained solution to a polytetrafluoroethylene-lined reactor, reacting, washing the reaction solution with absolute ethanol, centrifuging, and drying.