• 专利标题:   Nitrogen-doped graphene/PVDF composite dielectric thin film preparation method, involves cleaning glass substrate by mixed solution, and placing cleaned glass substrate on oven to perform heating operation.
  • 专利号:   CN103500654-A
  • 发明人:   CHENG J, SUN Y, ZHANG X
  • 专利权人:   ZHANG X
  • 国际专利分类:   H01G004/06, H01G004/33
  • 专利详细信息:   CN103500654-A 08 Jan 2014 H01G-004/06 201424 Pages: 4 Chinese
  • 申请详细信息:   CN103500654-A CN10481158 11 Oct 2013
  • 优先权号:   CN10481158

▎ 摘  要

NOVELTY - The method involves mixing graphite oxide and melamine to obtain acetone solution according to mass ratio of 4: 1. The acetone solution is boiled for removing acetone. The boiled acetone solution is dried in a drying box. Nitrogen-doped graphite alkene is mixed with ethanol at temperature of about 60 degrees centigrade. A glass substrate is cleaned by mixed solution. The cleaned glass substrate is placed in an oven to perform heating operation. A composite dielectric film is formed. High purity coating conductive silver paste is coated on the composite dielectric film. USE - Nitrogen-doped graphene/PVDF composite dielectric thin film preparation method. ADVANTAGE - The method enables preparing a thin film with high strength, high stability, high conductivity and large surface area, and improving polymer-base composite material utilization rate.