▎ 摘　　要

NOVELTY - Film forming method involves loading a substrate into a processing container, forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas and forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas. USE - Film forming method. ADVANTAGE - The method improves the barrier property at the interface between the substrate and the graphene film, increases or decreases the composition ratio of silicon carbide in the interfacial amorphous layer, makes the hydrogen-containing gas contribute to unstable carbon bonds as an etching component, and thus stabilizes the structure of the formed graphene film, enhances the film forming rate of the interfacial amorphous layer, and suppresses the oxidization of the surface of the substrate or the surface of the base film on the substrate by oxygen inside the processing container after the substrate is loaded into the processing container. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an apparatus, which comprises a processing container configured to accommodate a substrate, and a controller, where the controller is configured to execute a film forming method including: a loading process of loading the substrate into the processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.