• 专利标题:   Preparing boron-doped fluorinated polyimide film used in supercapacitor, involves obtaining polyimide by weighing certain amount of diamine, and four organic solvent and adding into mouth flask, stirring at normal temperature to diamine to dissolve, and weighing certain mass of dianhydride.
  • 专利号:   CN115537027-A
  • 发明人:   LI X
  • 专利权人:   TIANJIN CHINATECH MATERIALS TECHNOLOGY
  • 国际专利分类:   C08G073/10, C08J005/18, C08K003/38, C08L079/08, H01G011/30, H01G011/86
  • 专利详细信息:   CN115537027-A 30 Dec 2022 C08L-079/08 202311 Chinese
  • 申请详细信息:   CN115537027-A CN11278755 19 Oct 2022
  • 优先权号:   CN11278755

▎ 摘  要

NOVELTY - Preparing boron-doped fluorinated polyimide film involves obtaining polyimide by weighing certain amount of diamine, and four organic solvent and adding into mouth flask, stirring at normal temperature to diamine to dissolve, then weighing a certain mass of dianhydride, adding it, reacting for 8-10 hours at normal temperature, and finishing reaction to obtain viscous solution. A boron doped and film is prepared by adding a certain proportion of boric acid into the viscous solution obtained, after dissolving, paving the solution on the clean glass plate, scraping by a film coating machine, placing in an oven, pre-removing reagent, performing imidization, cooling to room temperature, stripping the film, placing in an oven to dry, and obtaining boron-doped fluorinated polyimide film. USE - Method for preparing boron-doped fluorinated polyimide film used in supercapacitor, and energy storage system such as lithium ion battery (LIBs). ADVANTAGE - The boron-doped fluorinated polyimide film has good electrochemical performance on the super capacitor, because the monomer used by the method, the diamine contains CF3 and the presence of CF3, when the laser etching, can make the hole after etching more, making the electrolyte better permeate into the hole. The graphene of carbon and boron in the crystal lattice makes the Fermi level transfer to valence band, to enhance the charge storage and transfer in the doped graphene structure after doping the heteroatom borons. DETAILED DESCRIPTION - Preparing boron-doped fluorinated polyimide film involves obtaining polyimide by weighing certain amount of diamine, and four organic solvent and adding into mouth flask, stirring at normal temperature to diamine to dissolve, then weighing a certain mass of dianhydride, adding it, reacting for 8-10 hours at normal temperature, and finishing reaction to obtain viscous solution. A boron doped and film is prepared by adding a certain proportion of boric acid into the viscous solution obtained, after dissolving, paving the solution on the clean glass plate, scraping by a film coating machine, placing in an oven, pre-removing reagent, performing imidization, cooling to room temperature, stripping the film, placing in an oven to dry, and obtaining boron-doped fluorinated polyimide film. A super Capacitor is obtained after drying polyimide film, using laser to etch the shape of the electrode, coating polyvinyl alcohol/sulfuric acid (PVA/H2SO4) electrolyte on the electrode, drying, and testing the performance.