• 专利标题:   Use of volatile small molecule compounds in preparation of suspended two-dimensional material films by clean transfer for transmission electron microscopy carrier network, high-resolution structure analysis of single particles, or high-resolution single-atom imaging.
  • 专利号:   CN113023718-A, CN113023718-B
  • 发明人:   PENG H, ZHENG L
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   C01B021/064, C01B032/194
  • 专利详细信息:   CN113023718-A 25 Jun 2021 C01B-032/194 202165 Pages: 12 Chinese
  • 申请详细信息:   CN113023718-A CN11343879 24 Dec 2019
  • 优先权号:   CN11343879

▎ 摘  要

NOVELTY - Use of volatile small molecule compounds in the preparation of suspended 2-dimensional material films by clean transfer, is claimed. USE - The volatile small molecule compounds are useful in preparation of suspended 2-dimensional material films, which is useful as a transmission electron microscopy carrier network in cryo-electron microscopy sample preparation, high-resolution structure analysis of single particles, high-resolution single-atom imaging, or transmission electron microscopy imaging (all claimed). ADVANTAGE - The volatile small molecule compounds does not require introduction any polymer, provides clean surface of suspended graphene film, realizes batch preparation of clean suspended graphene support films, and controls number of suspended graphene layers. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing a suspended 2-dimensional material support film by clean transfer involving (a) growing a 2-dimensional material film on a metal substrate, dripping the volatile small molecule compound onto the 2-dimensional material film on the side A, in which the side A is one side of the metal base and the other side of the metal base is referred to as side B, and (b) evaporating the volatile small molecule compounds on the surface of the two-dimensional material film, bleaching the metal substrate and the 2-dimensional material film on the etching solution, ensuring the two-dimensional material film on the A surface is not in contact with the etching solution, etching the metal substrate, supporting the two-dimensional material film on the surface of the etching solution with a porous substrate, washing and drying to obtain film.