▎ 摘　　要

NOVELTY - Growing gallium nitride by using a graphene mask involves using gallium nitride layer, a mask layer and a substrate layer. The substrate layer is covered with graphene by vapor deposition method. The mask layer is formed by etching the graphene. The etched graphene has a grating-like stripe structure. A gallium nitride layer is grown on the mask layer by metal organic chemical vapor deposition method. The area where the graphene is etched and the substrate layer is exposed is the window area. The area where the graphene is not etched and covers the substrate layer is the mask area. The gallium nitride is directly nucleated and grown directly on the substrate layer through the window area, and gallium nitride cannot grow on the surface of the mask area. The lateral epitaxial capability of gallium nitride enables the formation of a gallium nitride layer through merging and forming the film in the subsequent growth process to form the gallium nitride layer. USE - Method for growing gallium nitride by using a graphene mask. ADVANTAGE - The method enables to grow gallium nitride by using a graphene mask is easy to peel off, reduces gallium nitride dislocations, improves its growth quality, reduces the low-angle grain boundary defects caused by the mask layer, has good heat dissipation characteristics, and improves the heat dissipation performance of GaN devices.