▎ 摘　　要

NOVELTY - The method involves providing a substrate (201). A semiconductor film is formed on the surface of the substrate. A graphene film is formed on the top surface of the semiconductor film. A black phosphor film is formed on a top surface of the graphene film. A patterned mask layer is formed on the top surface of the black phosphorus film. Multiple discrete semiconductor layers (213) are formed on the surface of the substrate. A graphene layer (215) is formed on the top surface of the semiconductor layer. A black phosphor layer (217) is formed on the top surface of the graphene layer. USE - Method for forming semiconductor structure. ADVANTAGE - The performance of the semiconductor structure is improved. The additional light absorption loss and light scattering loss is effectively avoided. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a method for forming semiconductor structure. Substrate (201) Insulating layer (202) Discrete semiconductor layer (213) Graphene layer (215) Black phosphor layer (217)