▎ 摘　　要

NOVELTY - Electrically activating a structure having one or more graphene layers (102) formed on a silicon carbide layer comprises subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost (102a) of the one or more graphene layers, thus electrically activating the bottommost graphene layer. USE - The method is used for electrically activating a structure having one or more graphene layers formed on a silicon carbide layer (claimed). ADVANTAGE - The graphene buffer layers are activated on silicon carbide. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are: (1) a method of forming a graphene-based electronic device; and (2) a graphene-based electronic device comprising one or more graphene layers formed over a silicon carbide layer; and a silicon oxide layer disposed between the silicon carbide layer and the one or more graphene layers such that bottommost of the one or more graphene layers is electrically active. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a silicon carbide substrate. Substrate (100) Graphene layer (102) Bottommost layer (102a) Oxide layer (104)