▎ 摘　　要

NOVELTY - Preparing graphene by relatively closed area solid-phase process, comprises (1) successively or simultaneously depositing a carbon source layer and catalytic metal layer on surface of clean substrate to obtain graphene preparation precursor; and (2) upside down placing a graphene preparation precursor on loading table in annealing equipment, and heat annealing in oxygen-free or low-oxygen environment; or covering a surface of carbon source layer and/or catalytic metal layer of graphene preparation precursor with inert cover, placing it on loading table in annealing equipment, and heat-annealing in oxygen-free or low-oxygen environment; where described inversion is when graphene preparation precursor is placed on loading table of annealing equipment, its substrate is on top, and deposited carbon source layer and/or catalytic metal layer is on bottom; substrate, inert cover and loading table do not react with carbon source layer or catalytic metal layer during heat annealing process. USE - The graphene is useful in electronic device e.g. functional electronic device. ADVANTAGE - The method: prepared graphene has better quality, no metal residue, and wider range of carbon source selection.