▎ 摘　　要

NOVELTY - The method involves growing a gallium dioxide layer (2) on a substrate (1), preparing a single-layer polar hydrogen fluoride graphene (5) by surface functional growth, performing secondary transfer adjusting direction to the polar fluoride graphene using a transfer polymer, transferring to the gallium oxide layer, constructing a heterojunction interface between gallium oxides/polar fluoride graphene and using a strong charge transfer of the heterojunctions interface to obtain a surface-P-type gallium oxide without lattice damage. USE - The method is useful for preparing surface P-type gallium oxide, which is useful in a gallium-oxide photoelectric device. ADVANTAGE - The method provides surface P-type gallium oxide without lattice damage. The method abandons the traditional ion doping process, uses heterogeneous engineering transfer self-alignment process, reduces the cost, simplifies the process, realizes electron extraction and hole injection on the surface of gallium nitrogen oxides by interface charge transfer efficiency, and does not block transport of characteristics. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the Preparation method of surface P-type gallium oxide (a) to (e) represents a different process stage (Drawing includes non-English language text). 1Substrate 2Gallium oxide layer 4Preparing graphene layer 5Polar hydrogen fluoride graphene 6Transfer printing polymer 7Transfer printing polymer ii