▎ 摘　　要

NOVELTY - The method involves preparing (S10) a thin film insulating layer on a metal substrate. The metal sensitive thin film layer is formed (S20) on one side of the thin film insulating layer. The first adhesive layer is formed (S30) on a side of the metal sensitive thin film layer that is far from the thin film insulating layer. The graphene layer is formed (S40) on a side of the first adhesive layer away from the metal sensitive thin film layer. The second adhesive layer is formed (S50) on a side of the graphene layer remote from the first adhesive layer. The metal sensitive thin film layer, the first adhesive layer, the graphene layer and the second adhesive layer have the same shape and are sequentially stacked to form a resistance grid and an electrode connection structure. USE - Method for preparing thin film strain sensor. ADVANTAGE - The thin film strain sensor manufacturing method can make the thin film strain sensor with excellent electrical conductivity and strong physical properties. The manufactured sensor can be used in harsh environments such as acid and alkali, salt spray, high and low temperature alternation. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process for preparing a thin film strain sensor. (Drawing includes non-English language text) Step for preparing a thin film insulating layer on a metal substrate (S10) Step for forming a metal sensitive thin film layer on one side of the thin film insulating layer (S20) Step for forming a first adhesive layer on a side of the metal sensitive thin film layer that is far from the thin film insulating layer (S30) Step for forming a graphene layer on a side of the first adhesive layer away from the metal sensitive thin film layer (S40) Step for forming a second adhesive layer on a side of the graphene layer remote from the first adhesive layer (S50)