• 专利标题:   Method for improving direct current model of liquid grid graphene field-effect transistor, involves obtaining improved concentration-related LG-GFET model, and completing improved operation of traditional GFET model.
  • 专利号:   CN114647995-A
  • 发明人:   DENG J, YI K, JIANG K
  • 专利权人:   CHENGDU TONGLIANG TECHNOLOGY CO LTD
  • 国际专利分类:   G01N027/414, G06F030/367, G06F030/373, G16C010/00, G16C020/10
  • 专利详细信息:   CN114647995-A 21 Jun 2022 G06F-030/367 202259 Chinese
  • 申请详细信息:   CN114647995-A CN10212152 04 Mar 2022
  • 优先权号:   CN10212152

▎ 摘  要

NOVELTY - Improving direct current model of liquid grid graphene field effect transistor comprises (i) obtaining the traditional GFET model, (ii) introducing the direction of the concentration parameter variable to the LG-GFET model obtained in the step (i), (iii) carrying out the result verification when the result of the verification is in accordance with the result, (iv) performing the improved concentration-related LG- GFET models obtained in step (ii), and (v) completing the improved operation of the traditional FET model. The method further comprises (vi) using a double-layer capacitance formula to replace the grid capacitive formula in the traditional Graphene (GFET) model to obtain the primary improved FET. The direction of introducing the concentration parameters variable is divided into two kinds of influence on the concentration of the detection object. USE - Method for improving direct current model of liquid grid graphene field-effect transistor in biological detection application. Can also be used in life science and circuit field. ADVANTAGE - The method utilizing the model to directly obtain the concentration of the detection object when detecting to obtain the electrical signal, improving the detection efficiency for the biological detection field, and improving the performance of the liquid grid graphene field-effect transistor (LG-GFET). DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating a method for improving direct current model of liquid grid graphene field-effect transistor (Drawing includes non-English language text).