• 专利标题:   Secondary growing of graphene on metal surface comprises e.g. growing graphene film in situ on surface of metal substrate by using laser method, infiltrating carbon source into metal substrate, destroying graphene film, and heating.
  • 专利号:   CN112941508-A
  • 发明人:   YE X, QIANG H, SUN Q, JING D, YANG Y, ZHANG L, SUO G, FENG L, HOU X
  • 专利权人:   UNIV SHAANXI SCI TECHNOLOGY
  • 国际专利分类:   C23C024/10, C23C026/00, C23C008/64
  • 专利详细信息:   CN112941508-A 11 Jun 2021 C23C-024/10 202156 Pages: 11 Chinese
  • 申请详细信息:   CN112941508-A CN10197671 22 Feb 2021
  • 优先权号:   CN10197671

▎ 摘  要

NOVELTY - Secondary growing of graphene on metal surface comprises growing graphene film in situ on the surface of the metal substrate by using the laser method, infiltrating the carbon source into the metal substrate at the same time, then destroying the graphene film, and heating the metal substrate under argon protection, so that the carbon source in the metal substrate is deposited on the surface to form secondary growth graphene. USE - The method is useful for secondary growing of graphene on metal surface. ADVANTAGE - The method: continuously separates out the surface by carbon source in the metal substrate; is anti-arc ablation; improves the alloy mechanical property providing durability; fully exerts the excellent electrical and thermal of graphene, and mechanical performance; realizes self-repairing after damage without disassembling device; and realizes the purpose of reducing the processing cost and increasing the service life of the metal piece.