▎ 摘　　要

NOVELTY - The transistor i.e. field effect transistor (100), has a channel (110) made of graphene, where the graphene includes a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, and the graphene has a band gap. The boron atoms and the nitrogen atoms substitute from about 1 percent to about 20 percent of the carbon atoms of the graphene. A difference between densities of the boron atoms and the nitrogen atoms is below preset value. The carbon atoms are partially substituted with dimmer. The boron and nitrogen atoms are present in the graphene at the same ratio. USE - Transistor i.e. field effect transistor. ADVANTAGE - The graphene includes the structure of carbon atoms partially substituted with the boron atoms and nitrogen atoms and the graphene has the band gap, thus enabling the transistor to pattern edges in the shape of an arm chair in a simple manner. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a field effect transistor including graphene. Field effect transistor (100) Substrate (101) Insulation film (102) Channel (110) Gate electrode (132)