▎ 摘　　要

NOVELTY - Graphene interconnect structure comprises a first oxide dielectric layer (10), second oxide dielectric layer (20) disposed on one side of the first oxide dielectric layer and having a higher dielectric constant than the first oxide dielectric layer, and graphene layer disposed on a surface opposite to the second oxide dielectric layer on which the first oxide dielectric layer is disposed. USE - The graphene interconnect structure is useful for electronic device (claimed) and semiconductors. ADVANTAGE - The graphene interconnect structure: reduces current density and resistance of about 1.1-10 times of the conductive wire due to changes the work function of the graphene layer; improves line width of the conductive wire; prevents electromigration of metal or metal alloy atoms, defects in the conductive wire; and generates dipole moment at the interface between the first oxide dielectric layer and the second oxide dielectric layer. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (i) electronic device comprising substrate, and graphene interconnect structure; and (ii) manufacturing graphene interconnect structure, comprising (a) preparing a first oxide dielectric layer, (b) forming a second oxide dielectric layer having a higher dielectric constant than the first oxide dielectric layer by atomic layer deposition (ALD) on one surface of the first oxide dielectric layer, and (c) directly growing a graphene layer on the opposite surface of the second oxide dielectric layer on which the first oxide dielectric layer is formed by chemical vapor deposition (CVD), where the second oxide dielectric layer contains metal oxide-based compound of formula (A1xOy) (I). A1=Al, Ti, Zr, Hf, Mg, Si, Ge, Y, Lu, La or Sr; x=0-2; and y=0-3. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of change in fermi energy level of a graphene layer in an graphene interconnect structure. 10First oxide dielectric layer 20Second oxide dielectric layer