• 专利标题:   Back contact structure useful for thin film solar cell e.g. cadmium telluride thin film solar cell and perovskite thin film solar cell, has p-type titanium oxide film as p-type transition layer that is set on P-type semiconductor light absorption layer.
  • 专利号:   CN114664952-A
  • 发明人:   LIANG J, PAN F
  • 专利权人:   UNIV PEKING SHENZHEN GRADUATE SCHOOL
  • 国际专利分类:   C23C014/08, H01L031/02, H01L031/0216, H01L031/18
  • 专利详细信息:   CN114664952-A 24 Jun 2022 H01L-031/02 202269 Chinese
  • 申请详细信息:   CN114664952-A CN10254537 15 Mar 2022
  • 优先权号:   CN10254537

▎ 摘  要

NOVELTY - A back contact structure comprises a p-type semiconductor light absorption layer, and a p-type titanium oxide film as a p-type transition layer arranged on the surface of the light absorption layer. USE - The back contact structure is useful for thin film solar cell, which is cadmium telluride thin film solar cell, copper indium gallium selenide thin film solar cell, copper zinc selenium sulfide thin film solar cell, perovskite thin film solar cell and organic thin film solar cell (all claimed). ADVANTAGE - The back contact structure effectively increases the charge transport of hole, reduces interface recombination of photo-generated carrier of holes, improves the absorption of the carrier, and the photoelectric conversion efficiency of the solar cell, has high reliability and current, and provides thin film solar cell, which has high efficiency, and low cost. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a thin film solar cell, which comprises the back contact structure, and a back electrode layer designed on the surface of the titanium oxide film; and (2) preparation of the back contact structure.