▎ 摘　　要

NOVELTY - The laser has a N-type doped silicon substrate layer (1) from bottom to top in turn provided with a buffer layer (2), a light layer (3), a potential king layer (4), an active layer (5), another potential king layer (9), a glazing layer (10) and an ohmic contact layer (11). The substrate layer is provided with a semiconductor light amplifier structure and two optical grating structures (6, 7). The active layer is arranged between the two optical grating structures. A graphene layer is adhered at an input end surface of one of the optical grating structure as a saturated absorbing body. USE - Waveguide graphene driven lock mold laser. ADVANTAGE - The laser is convenient to integrate, and utilizes graphene saturation absorption characteristic so as to realize ultra-short pulse laser. DETAILED DESCRIPTION - The graphene layer is made of a single layer graphene and multi-layer graphene or graphene. The buffer layer is made of germanium (Ge)/gallium arsenic (GaAs) or gallium arsenic material. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a waveguide graphene driven lock mold laser. N-type doped silicon substrate layer (1) Buffer layer (2) Light layer (3) Potential king layer (4) Active layer (5) Semiconductor light amplifier structure and two optical grating structures (6, 7) Another potential king layer (9) Glazing layer (10) Ohmic contact layer (11)