▎ 摘　　要

NOVELTY - Measuring (M1) a thickness of graphene layer directly grown on silicon substrate by using X-ray photoelectron spectroscopy (XPS) instrument, comprises: obtaining signal intensities from graphene layer directly grown on silicon substrate in response to emitting X-ray radiation toward the graphene layer (120) directly grown on silicon substrate (110) using XPS instrument; and calculating thickness (tG) of graphene layer as given in the equation of the specification. USE - The methods are useful for: measuring a thickness of graphene layer directly grown on silicon substrate by using XPS; and measuring a content of silicon carbide included in an interface layer between the silicon substrate and the graphene layer directly grown on the silicon substrate (all claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for measuring (M2) a content of silicon carbide included in an interface layer (130) between a silicon substrate and a graphene layer directly grown on the silicon substrate, comprising measuring the content of the silicon carbide by using a spectrum of a photoelectron beam emitted from the silicon substrate by using XPS. DESCRIPTION OF DRAWING(S) - The figure shows generation of a photoelectron beam from the graphene layer or its emissions to the outside or its detections. Silicon substrate (110) Graphene layer (120) Interface layer (130)