▎ 摘　　要

NOVELTY - The preparation method of reversible N-type graphene induced by water-based atomic layer deposition (ALD), involves forming graphene layer on surface of substrate, placing substrate, on which graphene layer grows, in ALD chamber, increasing temperature of chamber to set value, passing one cycle of deionized water, and increasing concentration of water in water/oxygen molecule pair adsorbed on surface of graphene layer to enable concentration of oxygen in water/oxygen molecule pair to be reduced relatively to form N-type graphene layer. USE - The method is useful for the preparation of reversible N-type graphene induced by water-based atomic layer deposition method (claimed). ADVANTAGE - The method ensures the preparation of reversible N-type graphene induced by water-based atomic layer deposition method in a simple manner with high reversibility and without any damage to the crystal structure.