▎ 摘　　要

NOVELTY - The device has a metal layer (14) provided above a substrate (10) comprising a semiconductor element, where the metal layer includes convex shape on a cross-sectional surface and extends in a first longitudinal direction. A graphene layer (15) is provided on the metal layer to surround a side surface and an upper surface of a convex portion of the metal layer. The graphene layer includes a curved cross-sectional surface and extends in a second longitudinal direction, where the first longitudinal direction of the metal layer conforms to the second direction of the graphene layer. USE - Semiconductor device. ADVANTAGE - The device ensures that influence by edge scattering effect on resistance of a graphene end portion is reduced and a graphene wiring structure exhibiting low resistance even with minute wire width is realized. The device performs graphene quality enhancing process to easily attain electrical conduction and realize a low-resistance wire. The device ensures that height of a catalyst metal layer is increased and number of stack layers of the graphene sheets is increased to form a conduction path in a layer form and lower resistance. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device. Substrate (10) Interlayer insulating film (11) Metal layer (14) Graphene layer (15) Graphene wires (20)