▎ 摘　　要

NOVELTY - The device has a graphene layer (2), a crystal germanium film layer (3), and a single crystal silicon carbide substrate (4) that are connected to two electrodes (1) from the upper to the lower. The graphene layer is a single atomic layer or a polyatomic thick layer. The thickness of the crystal germanium film layer is 0.5-5 micron. The thickness of the single crystal silicon carbide substrate is 100-400 microns. USE - Silicon carbide/crystal germanium/graphene hetero-junction photoelectrical device. ADVANTAGE - The graphene is used with high transmittance and high carrier mobility. The high speed and high response of near infrared light control device is achieved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing method of silicon carbide/crystal germanium/graphene hetero-junction photoelectrical device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the silicon carbide/crystal germanium/graphene hetero-junction photoelectrical device. Electrode (1) Graphene layer (2) Crystal germanium film layer (3) Single crystal silicon carbide substrate (4)