• 专利标题:   Manufacture of graphene, carbon nanotube, fullerene and/or graphite for forming structure, involves depositing metal-containing material on graphene, carbon nanotube, fullerene and/or graphite and irradiating electron beam on structure.
  • 专利号:   US2014302439-A1, KR2014121203-A, US9122165-B2
  • 发明人:   SHIM J, JEON T, EOM K, LEE D, SHIM J Y, JEON T H, EOM K S, LEE D H
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C01B031/04, G03F007/09, G03F007/16, C01B031/02, H01B001/00, H01B001/02, H01B001/04, G03F007/11, G03F007/20
  • 专利详细信息:   US2014302439-A1 09 Oct 2014 G03F-007/16 201470 Pages: 9 English
  • 申请详细信息:   US2014302439-A1 US050053 09 Oct 2013
  • 优先权号:   KR037682

▎ 摘  要

NOVELTY - Manufacture of graphene, carbon nanotubes, fullerene and/or graphite involves depositing a metal-containing material onto graphene, carbon nanotubes, fullerene and/or graphite, to form a structure, and irradiating an electron beam on the structure. The metal-containing material comprises aluminum, nickel, iron, cobalt, titanium, and/or chromium. USE - Manufacture of graphene, carbon nanotubes, fullerene and/or graphite used for forming structure (all claimed) used as electrode and conductive material in field-effect transistor. ADVANTAGE - The method enables efficient manufacture of graphene, carbon nanotubes, fullerene and/or graphite having position-specific regulated resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for structure, which comprises graphene, carbon nanotubes, fullerene and/or graphite having position-specific regulated resistance, and containing metal-containing material deposited on a surface, in which the metal is aluminum, nickel, iron, cobalt, titanium, and/or chromium. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of manufacture of graphene, carbon nanotubes, fullerene and/or graphite. Silicon substrate (110) Insulating layer (120) Graphene sheet (130) Metal-containing layer (140) Contact line (150)