• 专利标题:   Crystal cooling device for semiconductor device, has graphite sleeve whose inner wall is provided with graphene coating, and argon system downwards conveying argon gas for cooling along outer wall of water cooling sleeve.
  • 专利号:   CN217628720-U
  • 发明人:   SHI B, WANG J, ZHONG Y, WU H
  • 专利权人:   ZHENGZHOU WAFER WORKS SILICON MATERIALS
  • 国际专利分类:   C30B015/00, C30B015/20
  • 专利详细信息:   CN217628720-U 21 Oct 2022 C30B-015/00 202287 Chinese
  • 申请详细信息:   CN217628720-U CN21658805 30 Jun 2022
  • 优先权号:   CN21658805

▎ 摘  要

NOVELTY - The utility model claims a crystal cooling device, comprising a graphite sleeve coaxially arranged from inside to outside, and a water cooling sleeve with hollow interlayer; the centre of the graphite sleeve is provided with an axial through hole for the crystal pulling rod to pass through; the inner wall of the graphite sleeve is provided with a graphene coating; the cooling device further comprises an argon system; the argon gas system downwards conveys the argon gas for cooling along the outer wall of the water cooling sleeve. The application through graphene heat radiation, water cooling jacket water cooling cooling, argon cooling triple cooling system, the crystal bar quickly through cavity type defect growth nucleation of the characteristic temperature interval (1100 ~ 1070 degrees centigrade), effectively improving the crystal quality.