• 专利标题:   Graphene-based composite structure, useful as topological insulator in thin film transistor, comprises graphene layer, transition metal layer and substrate, where graphene layer and transition layer are coupled by orbitals hybridization.
  • 专利号:   US2014110662-A1, CN103779396-A, TW201416234-A, US8796664-B2, TW464064-B1, CN103779396-B
  • 发明人:   DUAN W, LI Y, CHEN P, WU J, GU B
  • 专利权人:   DUAN W, LI Y, CHEN P, WU J, GU B, HONGFUJIN PRECISION IND SHENZHEN CO LTD, UNIV TSINGHUA, HON HAI PRECISION IND CO LTD, UNIV TSINGHUA, HON HAI PRECISION IND CO LTD, HONGFUJIN PRECISION IND SHENZHEN CO LTD
  • 国际专利分类:   H01L021/36, H01L029/16, H01L021/04, H01L029/165, B32B007/04, C01B031/04, H01L029/06
  • 专利详细信息:   US2014110662-A1 24 Apr 2014 H01L-029/16 201431 Pages: 9 English
  • 申请详细信息:   US2014110662-A1 US685654 26 Nov 2012
  • 优先权号:   CN10403400

▎ 摘  要

NOVELTY - The graphene-based composite structure (10) comprises a graphene layer (12), a transition metal layer (14) and a substrate (16). The graphene layer, the transition metal layer, and the substrate are stacked together in series. The graphene layer and the transition metal layer are coupled by hybridization of d orbitals of transition metal atoms in the transition metal layer and p orbitals of carbon atoms in the graphene layer. The transition metal layer and the substrate are coupled by hybridization of d orbitals of transition metal atoms in the transition metal layer. USE - The graphene-based composite structure is useful as a topological insulator (claimed), and in electronic devices and semiconductor device such as thin film transistor, integrated circuit, sensor and other nano-scale devices. ADVANTAGE - The graphene-based composite structure preserves Dirac cone structure thus exhibiting strong interaction between the graphene and substrate, and has excellent carrier mobility and thermal and mechanical stabilities. DETAILED DESCRIPTION - The graphene-based composite structure (10) comprises a graphene layer (12), a transition metal layer (14), and a substrate (16). The graphene layer, the transition metal layer and the substrate are stacked together in series. The graphene layer and the transition metal layer are coupled by hybridization of d-orbitals of transition metal atoms in the transition metal layer and p-orbitals of carbon atoms in the graphene layer. The transition metal layer and the substrate are coupled by hybridization of d-orbitals of transition metal atoms in the transition metal layer and p orbitals of silicon atoms in the substrate. The graphene layer is a single-layer graphene. The transition metal layer is a one-atom-thick transition metal layer. A binding energy between the graphene layer and a composite structure of the transition metal layer and the substrate is 0.51 eV/C. A band structure of the graphene-based composite structure is a Dirac cone. A spin-orbit gap in the band structure is 100 meV. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a graphene-based composite structure. Graphene-based composite structure (10) Graphene layer (12) Transition metal layer (14) Substrate. (16)