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  • 专利标题:   Electronic device e.g. tunnel transistor, comprises channel layer comprising graphene(s) with edge portions terminated with modifying groups different from each other bonded to each other, and electrodes formed on channel layer.
  • 专利号:   US2015280012-A1, JP2015191975-A, US9722085-B2, JP6323114-B2
  • 发明人:   SATO S, JIPPO H, OHFUCHI M, OFUCHI M
  • 专利权人:   FUJITSU LTD, FUJITSU LTD, FUJITSU LTD
  • 国际专利分类:   H01L021/02, H01L021/04, H01L029/16, H01L029/167, H01L029/66, H01L029/786, C01B031/02, H01L021/336, H01L051/05, H01L051/30, H01L051/40, H01L029/73, H01L029/739, H01L029/778
  • 专利详细信息:   US2015280012-A1 01 Oct 2015 H01L-029/786 201570 Pages: 20 English
  • 申请详细信息:   US2015280012-A1 US665188 23 Mar 2015
  • 优先权号:   JP067104

▎ 摘　　要

NOVELTY - An electronic device comprises channel layer (43) comprising graphene(s) with edge portions terminated with modifying groups different from each other bonded to each other, and electrodes formed on the channel layer. USE - Electronic device e.g. tunnel transistor. ADVANTAGE - The electronic device has various polarity combinations, and high on-off ratio by forming band gap by providing graphene in the form of nanoribbons, and excellent reliability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining manufacture of tunnel transistor. Graphene nanoribbons (41,42) Channel layer (43) Gate electrode (45) Source electrode (46) Drain electrode (47)