• 专利标题:   Nitrogen doped bismuth vanadate with oxygen vacancy graphene oxide nanocomposite photocatalytic material used in photocatalytic degradation of pollutants comprises nitrogen doped bismuth vanadate with oxygen vacancy and graphene oxide.
  • 专利号:   CN110180572-A
  • 发明人:   YANG Y, BI Y, HOU X, FENG L, SUO G, HE R, CHEN H, YE X, ZHANG L, CHEN Z, ZHU J, SUN Y, ZOU X
  • 专利权人:   UNIV SHAANXI SCI TECHNOLOGY
  • 国际专利分类:   B01J027/24, B01J035/10, B01J037/08, B82Y030/00, B82Y040/00, C01B003/04, C02F001/30, C02F101/30, C02F101/34, C02F101/38
  • 专利详细信息:   CN110180572-A 30 Aug 2019 B01J-027/24 201979 Pages: 13 Chinese
  • 申请详细信息:   CN110180572-A CN10379555 08 May 2019
  • 优先权号:   CN10379555

▎ 摘  要

NOVELTY - Nitrogen doped bismuth vanadate with oxygen vacancy graphene oxide nanocomposite photocatalytic material comprises nitrogen doped bismuth vanadate with oxygen vacancy and nitrogen doped graphene oxide to form the nano-composite structure. USE - The material is useful in photocatalytic degradation of pollutants (claimed). ADVANTAGE - The material: has narrow band width, has wide range of light response, high electron hole separation rate and strong catalytic capability; and significantly improves solar energy utilization efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing nanocomposite photocatalytic material comprising dispersing bismuth(III) nitrate, sodium metavanadate, sodium azide and graphene oxide through solvothermal reaction.