▎ 摘　　要

NOVELTY - A crystal film pattern (12) is formed on a substrate (11). A graphene sheet (13) is made to grow from the catalyst film pattern. The source and drain electrode portions (15,14) are formed in both ends of the graphene sheet. A gate electrode portion (16) is formed on the graphene sheet. USE - Manufacturing method of semiconductor device e.g. transistor. ADVANTAGE - The catalyst film pattern having a shape and a crystal pattern controlled for enabling formation of the graphene sheet in a desired place. The miniaturization and characteristic improvement are achieved by forming a graphene sheet having a desired shape and electrical conductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for wiring structure. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional model diagram of the semiconductor device and the expanded planar model diagram of the channel portion.(Drawing includes non-English language text) Semiconductor device (10) Substrate (11) Catalyst film pattern (12) Graphene sheet (13) Drain electrode portion (14) Source electrode portion (15) Gate electrode portion (16)