▎ 摘　　要

NOVELTY - The device has a single-layer graphene part (102) extending in lateral direction. A multi-layer graphene structure (104) laterally contacts the single-layer graphene part. A graphite part is in contact with a surface of the multi-layer graphene structure. The graphite part is spaced apart from the single-layer graphene part in the lateral direction. The multi-layer graphene structure and the graphite part form an electrical contact for the single-layer graphene part. The multi-layer graphene structure forms a transition region between the single-layer graphene part and the graphite part. USE - Electrical device e.g. transistor, diode and photodetector. ADVANTAGE - The device provides reduced contact resistance for electrical contacts of the graphene part. The provides utilizes alloy of the first metal and the second metal to prevent deposition of graphene at a surface of an alloyed portion. DETAILED DESCRIPTION - The device utilizes ethene as a precursor in chemical vapor deposition. An INDEPENDENT CLAIM is also included for a method for manufacturing an electrical device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure for forming a single-layer/multi-layer combination structure directly on an arbitrary substrate. Substrate (10) Single-layer graphene part (102) Multi-layer graphene structure (104) Metal substrates (432, 434)