• 专利标题:   Thinning transition metal dichalcogenide in electronic device by illuminating first location of transition metal dichalcogenide material with electromagnetic radiation while applying positive potential between material and gate electrode.
  • 专利号:   WO2022104037-A1
  • 发明人:   ZHENG Y, HUANG S
  • 专利权人:   UNIV TEXAS SYSTEM
  • 国际专利分类:   C23C016/02, C23C016/30, C23C016/455
  • 专利详细信息:   WO2022104037-A1 19 May 2022 C23C-016/02 202247 Pages: 109 English
  • 申请详细信息:   WO2022104037-A1 WOUS059111 12 Nov 2021
  • 优先权号:   US113752P

▎ 摘  要

NOVELTY - Transition metal dichalcogenide is thinned by providing electromagnetic radiation by a light source. The method comprises illuminating a first location of transition metal dichalcogenide material (106) with electromagnetic radiation while applying a positive potential between the transition metal dichalcogenide material and a gate electrode. The light source is an artificial light source comprising a laser. The electromagnetic radiation is provided by an electromagnetic radiation source to illuminate a mirror and the mirror is configured to reflect the electromagnetic radiation to illuminate the first location. A substrate (102) is transparent to the electromagnetic radiations. The source electrode (108), the gate electrode, and the drain electrode are disposed on surface (104) of the substrate via photolithography or photolithography on the substrate surface via photoresist or photolitholithography. The substrate is a dielectric substrate which is glass. The aqueous solution is water. USE - The method is useful for thinning a transition metal dichalcogenide material e.g. monolayer graphene in an electronic device and/or photonic device (all claimed). ADVANTAGE - The thickness of the multilayer molybdenum disulfide is reduced, even without applying bias, by choosing excitation laser wavelength between discrete layer-dependent bandgaps. The thinning will stop once the bandgap of the remaining layers is larger than the laser photon energy. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a patterned transition metal dichalcogenide material made using the methods; (2) a monolayer of a transition metal dichalcogenide made using the methods; (3) method of use of the patterned transition metal dichalcogenide material and/or the monolayer of the transition metal dichalcogenide; and (4) a system (100) for thinning the transition metal dichalcogenide material. DESCRIPTION OF DRAWING(S) - The figure illustrates cross-sectional view of system for thinning a transition metal dichalcogenide material. System (100) Substrate (102) Surface (104) Transition metal dichalcogenide material (106) Source electrode (108)