• 专利标题:   Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.
  • 专利号:   US2018346338-A1, KR2018132382-A, KR1999564-B1
  • 发明人:   CHO K, YOO M S, LEE H C, CHO K W
  • 专利权人:   CENT ADVANCED SOFT ELECTRONICS, CENT ADVANCED SOFT ELECTRONICS, POSTECH ACADIND FOUND
  • 国际专利分类:   C01B032/186, C23C014/34, C23C016/26, C01B032/182
  • 专利详细信息:   US2018346338-A1 06 Dec 2018 C01B-032/186 201883 Pages: 21 English
  • 申请详细信息:   US2018346338-A1 US867913 11 Jan 2018
  • 优先权号:   KR069244

▎ 摘  要

NOVELTY - Synthesis of graphene involves placing a copper-nickel thin film laminate comprising a copper thin film and a nickel thin film placed on the copper thin film in a chemical vapor deposition, bringing a graphene precursor into contact with the laminate and performing the chemical vapor deposition. USE - Synthesis of graphene for optoelectronic devices. ADVANTAGE - The process produces graphene with improved uniformity and electroconductivity, and controlled thickness and number of layers with simple process parameters. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a patterned graphene comprising a graphene portion (A) comprising m graphene layers, and a graphene portion (B) connected side by side to the portion (A) through covalent bonding and comprising m+n graphene layers, where m and n are 1-5.