• 专利标题:   Deposition of two-dimensional layers on substrate in process chamber, involves heating substrate, feeding reactive gas of carbon-containing chalcogenide, and adjusting substrate temperature, process chamber pressure, and partial pressure of reactive gas so that graphene is deposited as layer.
  • 专利号:   DE102020126844-A1
  • 发明人:   MCALEESE C, CONRAN B R, TEO K B K
  • 专利权人:   AIXTRON SE
  • 国际专利分类:   C01B032/186, C23C016/26, C23C016/44
  • 专利详细信息:   DE102020126844-A1 14 Apr 2022 C23C-016/26 202237 Pages: 13 German
  • 申请详细信息:   DE102020126844-A1 DE10126844 13 Oct 2020
  • 优先权号:   DE10126844

▎ 摘  要

NOVELTY - Deposition of two-dimensional layers involves placing a substrate into a process chamber of a chemical vapor deposition reactor (1), heating to a substrate temperature and setting a process chamber pressure, feeding a reactive gas comprising carbon-containing chalcogenide into the process chamber together with a carrier gas, where the reactive gas is chemically broken down into decomposition products in the process chamber and/or on a surface of the substrate, the decomposition products are carbon and other products forms a layer with a layer thickness on the surface of the substrate or a layer already deposited on the substrate, and adjusting the substrate temperature, the process chamber pressure, and the partial pressure of the reactive gas so that graphene is deposited as a layer. USE - Deposition of two-dimensional layers on substrate in process chamber of chemical vapor deposition reactor. ADVANTAGE - None given. DESCRIPTION OF DRAWING(S) - The drawings show a sectional view of the chemical vapor deposition reactor, and enlarged view of the chemical vapor deposition reactor. Chemical vapor deposition reactor (1) Gas inlet element (2) Gas distribution volume (3) Gas inlet (4) Gas outlet plate (5)