▎ 摘　　要

NOVELTY - Etching a graphene nanostructure, involves providing piece of highly oriented pyrolytic graphite, analyzing first window, second window and third window, depositing double-stranded unmethylated lambda DNA to reaction area, melting the above-mentioned DNA, cooling the above-mentioned DNA, diluting the above-mentioned DNA, applying buffer solution to the reaction area, incubating the reaction area, rinsing the reaction area with deionized water, analyzing third window, applying e.g. relative humidity, and rinsing the piece of graphite in warm deionized water. USE - The method is useful for etching a graphene nanostructure (claimed). DETAILED DESCRIPTION - Method for etching a graphene nanostructure, involves (a) providing a piece of highly oriented pyrolytic graphite, where the piece of highly oriented pyrolytic graphite is coated with a polymethylmetaacrylate resist, piece of highly oriented pyrolytic graphite has a first window, a second window, and a third window, the first window, the second window, and the third window are etched by a scanning electron microscope using an electron-beam lithography, the first window and the second window include one or more electrode contacts configured to receive an electrical voltage, and the first window and the second window are positioned approximately 600-1000 mu m apart, (b) analyzing the first window, the second window, and the third window with an atomic force microscope, where the first window and the second window include one or more electrodes configured to make electrical contact, portion of the third window includes a reaction area configured to receive a double-stranded unmethylated lambda DNA, (c) depositing the double-stranded unmethylated lambda DNA to the reaction area, (d) heating and melting the double-stranded unmethylated lambda DNA for eight to twelve minutes at 70-110 degrees C, (e) cooling the double-stranded unmethylated lambda DNA to room temperature, (f) diluting the double-stranded unmethylated lambda DNA with a buffer solution, where the buffer solution comprises 0.5-1.5 M potassium chloride, 8-12 mu M of tris(hydroxymethyl)aminomethane hydrochloride, and 8-12 mu M ethylenediaminetetraacetic acid, (g) applying the buffer solution to the reaction area, (h) incubating the reaction area for twenty to forty seconds, (i) rinsing the reaction area with a deionized water to remove the buffer solution and an excess DNA, (j) analyzing the third window with the atomic force microscope, (k) placing the piece of highly oriented pyrolytic graphite in a humidity controlled chamber, (l) applying a relative humidity of 60-90% to the piece of highly oriented pyrolytic graphite, (m) applying an electrical voltage gradient of 2-6 V/mm across the first window and the second window for one to two minutes, and (n) rinsing the piece of highly oriented pyrolytic graphite in a warm deionized water.