• 专利标题:   Gallium oxide-based UV detector, has graphene layer formed on surface of gallium crystal substrate, and ohmic contact electrode formed in graphene layer without contact with surface of gallium oxide crystal substrate.
  • 专利号:   CN108922931-A
  • 发明人:   LONG S, QIN Y, DONG H, HE Q, LIU M
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   H01L031/032, H01L031/0352, H01L031/108, H01L031/18
  • 专利详细信息:   CN108922931-A 30 Nov 2018 H01L-031/0352 201909 Pages: 12 Chinese
  • 申请详细信息:   CN108922931-A CN10717548 03 Jul 2018
  • 优先权号:   CN10717548

▎ 摘  要

NOVELTY - The detector has a gallium oxide crystal substrate formed with a first ohmic contact electrode and a second ohmic contact electrode, where the first ohmic contact electrode is grown on a first surface of the gallium oxide crystal substrate. A second surface of the gallium oxide crystal substrate is formed with a needle point shape structure. A graphene layer is formed on the second surface of the gallium crystal substrate. The second ohmic contact electrode is formed in the graphene layer without contact with the surface of the gallium oxide crystal substrate. The gallium oxide crystal substrate is N-type gallium (III) oxide crystal substrate. USE - Gallium oxide-based UV detector. ADVANTAGE - The detector improves response sensitivity and response speed, and can be manufactured by simple steps at low cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a gallium oxide-based UV detector. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a gallium oxide-based UV detector.