• 专利标题:   Manufacture of two-dimensional partially-chlorinated metal-doped graphene material involves introducing chlorine to two-dimensional metal carbide crystals, and etching metal carbide-doped graphene material with chlorine gas in preset amount.
  • 专利号:   CN106672945-A, CN106672945-B
  • 发明人:   MU S, MENG T, KOU Z, GUO B
  • 专利权人:   UNIV WUHAN TECHNOLOGY, UNIV WUHAN TECHNOLOGY
  • 国际专利分类:   C01B032/184, C01B032/914
  • 专利详细信息:   CN106672945-A 17 May 2017 C01B-032/184 201750 Pages: 21 Chinese
  • 申请详细信息:   CN106672945-A CN11209424 23 Dec 2016
  • 优先权号:   CN11209424

▎ 摘  要

NOVELTY - Manufacture of two-dimensional partially-chlorinated metal-doped graphene material involves introducing chlorine to two-dimensional metal carbide crystals at certain temperature, and etching the metal carbide-doped graphene material with chlorine gas. The amount of chlorine introduced during the reaction is lower than the amount of chlorine required for the complete conversion of metal atoms in the metal carbide into the metal chloride. USE - Manufacture of two-dimensional partially-chlorinated metal-doped graphene material (claimed). ADVANTAGE - The method enables efficient manufacture of two-dimensional partially-chlorinated metal-doped graphene material with suppressed generation of defects. The number of defects in the graphene surface is reduced. The amount of metal doping is controlled to 0.1-12 atomic%.