• 专利标题:   Preparing metal-graphene composite porous electrode material comprises e.g. taking porous metal as basal body, vacuum plating, depositing on transitional metal layer, preparing graphene layer and superimposing basal body.
  • 专利号:   CN105448528-A, CN105448528-B
  • 发明人:   MU J, WU T, WEI Y
  • 专利权人:   WUZHOU SANHE NEW MATERIAL TECHNOLOGY CO, WUZHOU HGP ADVANCED MATERIALS TECHNOLOGY
  • 国际专利分类:   B82Y030/00, H01G011/26, H01G011/30, H01G011/36, H01M010/052, H01M004/36, H01M004/38, H01M004/587, H01M006/14
  • 专利详细信息:   CN105448528-A 30 Mar 2016 H01G-011/26 201646 Pages: 8 English
  • 申请详细信息:   CN105448528-A CN10706762 27 Oct 2015
  • 优先权号:   CN10706762

▎ 摘  要

NOVELTY - Preparing metal-graphene composite porous electrode material comprises (i) taking porous metal as basal body, (ii) subjecting to vacuum plating process and depositing on transitional metal layer, (iii) preparing graphene layer using chemical gas phase deposition method comprising placing the processed porous material into vacuum furnace chamber, pumping vacuum into the furnace camber, rising temperature, introducing mixed gas, reacting, and cooling to obtain graphene layer, and (iv) taking the basal body, superimposing with the transition metal layer and graphene layer. USE - The method is useful for preparing metal-graphene composite porous electrode material (claimed). ADVANTAGE - The electrode material: has light weight, high surface area, high electrical conductivity, strong heat conductive ability and chemically stable properties; and is suitable for large scale production. DETAILED DESCRIPTION - Preparing metal-graphene composite porous electrode material comprises (i) taking porous metal as basal body, where the three dimensional dimension structure of porous metal having opening, average hole diameter of 100-3000 mu m, and thickness of 0.3-70 mm, (ii) taking the substrate taken in the step (i), subjecting to vacuum plating process and depositing on transitional metal layer, where, the vacuum plating process is vacuum magnetic control sputtering technology (preferable), vacuum deposition technique, and vacuum ion plating technique, the working parameters includes vacuum chamber base pressure is less than or equal to 5x 10-2 Pa, vacuum chamber pressure during sputtering is less than or equal to 1 Pa, target power density per decimeter of target is 0.1-1 KW, and the average thickness of the transition metal layer is 5-2000 nm, (iii) taking the transition metal layer obtained in the step (ii), preparing graphene layer using chemical gas phase deposition method comprising placing the processed porous material into vacuum furnace chamber, pumping vacuum into the furnace camber with a base pressure of less than or equal to 2 Pa, rising temperature to 650-1000 degrees C, introducing a mixed gas of hydrogen and argon, keeping the temperature for 10-45 minutes, continuously heating to 800-1100 degrees C, then reacting by introducing carbon source gas for 0.5-30 minutes, at the end of reaction stop introducing carbon source gas into the mixed gas of argon or hydrogen, and cooling to room temperature to obtain graphene layer having a thickness of 0.340-100 nm, and (iv) taking the basal body, superimposing with the transition metal layer and graphene layer.