▎ 摘　　要

NOVELTY - The transistor has a graphene heat dissipation layer which is formed on a silicon carbide substrate. The graphene heat dissipation layer has a thickness of 2 nm. A gallium nitride nucleation layer is formed on the graphene heat dissipation layer. A gallium nitride buffer layer is formed on the gallium nitride nucleation layer. A gallium nitride high electron mobility channel layer is formed on the gallium nitride buffer layer. An aluminum gallium nitride barrier layer is formed on gallium nitride channel layer. A source electrode, a drain electrode, a gate electrode, and a silicon nitide passivation layer are formed on the aluminum gallium nitride barrier layer. USE - Aluminum gallium nitride/gallium nitride HEMT with graphene heat dissipation layer. ADVANTAGE - The interface thermal resistance is reduced. The thermal reliability of the gallium nitride-based HEMT is improved when operating in a strong electric field and a high temperature environment. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of aluminum gallium nitride/gallium nitride HEMT with graphene heat dissipation layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the aluminum gallium nitride/gallium nitride high electron mobility transistor with graphene heat dissipation layer. (Drawing includes non-English language text)