▎ 摘　　要

NOVELTY - Manufacture of a semiconductor substrate structure involves preparing an intermediate structure (S1) (A) by forming a graphene layer (single layer or a multilayer) directly on a diamond wafer substrate, preparing an intermediate structure (S2) (B) by forming a hexagonal-boron nitride layer (monolayer or multilayer) directly on the structure (S1), and forming a gallium nitride epilayer (C) directly on the structure (S2). USE - Manufacture of semiconductor substrate structure used for electronic and optoelectronic devices e.g. LED and laser diodes. ADVANTAGE - The method produces a semiconductor substrate structure having improved thermal characteristics between the device and substrate. The method minimizes the occurrence of bow in the structure compared to the existing structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for semiconductor substrate structure.